Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

357W Tc

Current - Continuous Drain (Id) @ 25℃  

37A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

72 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3.5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperFET® II

Published  

2014

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

26 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

104m Ω @ 18.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4165pF @ 380V

Gate Charge (Qg) (Max) @ Vgs  

82nC @ 10V

Rise Time  

18ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±20V

Fall Time (Typ)  

3.3 ns

Continuous Drain Current (ID)  

37A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

809 mJ

Height  

16.3mm

Length  

10.67mm

Width  

4.7mm

RoHS Status  

ROHS3 Compliant